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* 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444 * 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445 * SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION * SILICON DIOXIDE PASSIVATED * COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW
CD2810 CD5711 CD5712 CD6857 CD6858 CD6916
MAXIMUM RATINGS
Operating Temperature: -55C to +125C Storage Temperature: -65C to +150C
15 MILS 3 MILS
BACKSIDE IS CATHODE
FIGURE 1
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified
CDI TYPE NUMBER
MINIMUM BREAKDOWN VOLTAGE (2) VBR @ 10 A VOLTS
MAXIMUM FORWARD VOLTAGE
MAXIMUM FORWARD VOLTAGE
MAXIMUM REVERSE LEAKAGE CURRENT V
MAXIMUM CAPACITANCE @ = 0 VOLTS R f = 1.0 MHZ CT
FIGURE NUMBER
VOLTS 0.41 0.41 0.41 0.35 0.36
VOLTS @ mA 1.0 @ 35 1.0 @15 1.0 @ 35 0.75 @ 35 0.65 @ 15 0.27 @ 0.1
nA 100 200 150 150 200 100 200 500
VOLTS 15 50 16 16 50 1 20 40
PICO FARADS 1.2 2.0 1.2 4.5 4.5 1 2 1 2 2
CD2810 CD5711 CD5712 CD6857 CD6858
20 70 20 20 70
15 MILS
CD6916
40 (2)
0.34
0.34 @ 1.0 0.47 @ 10.0
5
2
BACKSIDE IS CATHODE
FIGURE 2
NOTES: (1) Effective Minority Carrier Lifetime () is 100 Pico Seconds
(2) CD6916 V
BR measured @ 500 nanoamps
DESIGN DATA
METALLIZATION: Top: (Anode)...................... ..Al Back: (Cathode)................. Au o AL THICKNESS.................25,000 A Min o GOLD THICKNESS... ..........4,000 A Min CHIP THICKNESS............. .........10 Mils TOLERANCES: ALL Dimensions + 2 mils, Except Anode Pad Where Tolerance is + 0.5 mils.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
5.5 MILS
VF @ 1 mA
VF @ IF
1R @ VR
CD2810, CD5711, CD5712, CD6857, CD6858 and CD6916
100 IF - FORWARD CURRENT (mA)
10,000 IR - REVERSE CURRENT (nA)
10
1000
1.0
100
.1
10
.01 0 .2 .4 .6 .8 1.0 1.2
1.0 0 5.0 10 15 20 25 30
VF - FORWARD VOLTAGE (V)
VR - REVERSE VOLTAGE (V) (PULSED) Figure 2. CD5712 and CD2810 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
Figure 1. I-V Curve Showing Typical Forward Voltage Variation with Temperature for the CD5712 and CD2810 Schottky Diodes.
50 IF - FORWARD CURRENT (mA) IR - REVERSE CURRENT (nA)
100,000 1000
10 5
10,000
RD - DYNAMIC RESISTANCE (!!) 0 10 20 30 40 50 60
1000
100
1 .5 .1 .05
100
10
10
.01 0 .2 .4 .6 .8 1.0 1.2
1
1 .1 1.0 10 100
VF - FORWARD VOLTAGE (V)
VR - REVERSE VOLTAGE (V) (PULSED) Figure 4. CD5711 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
IF - FORWARD CURRENT (mA) (PULSED) Figure 5. Typical DynamiC Resistance (RD) vs. Forward Current (IF).
Figure 3. I-V Curve Showing Typical Forward Voltage Variation with Temperature for Schottky Diode CD5711.

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